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NCEP026N10MD - N-Channel Super Trench II Power MOSFET

This page provides the datasheet information for the NCEP026N10MD, a member of the NCEP026N10M N-Channel Super Trench II Power MOSFET family.

Datasheet Summary

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP026N10M NCEP026N10M TO-220 NCEP026N10MD NCEP026N10MD TO-263 Reel Size - Tape wi.

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Datasheet Details

Part number NCEP026N10MD
Manufacturer NCE Power Semiconductor
File Size 348.91 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP026N10MD Datasheet
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NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.
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