NCEP0135A
FEATURES
- Trench FET® Power MOSFET
- 100 % Rg and UIS Tested
APPLICATIONS
- Primary Side Switch
- Isolated DC/DC Converter
.VBsemi.
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
Limit 100 ± 20 45a 30 9.2b 6.8b 140 45a 2b
35 101 136.4 68.2 3b 1.5b
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case
Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board.
Steady State
Symbol Rth JA Rth JC
Typical 40 0.85
Maximum 50 1.1
Unit V
A...
