• Part: NCEP60T18
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 444.88 KB
Download NCEP60T18 Datasheet PDF
VBsemi
NCEP60T18
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFET - Package with Low Thermal Resistance - 100 % Rg and UIS Tested - pliant to Ro HS Directive 2002/95/EC GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 m H Maximum Power Dissipationb TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 60 ± 20 210 120 a 120 a 480 75 281 375 125 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case...