Datasheet Details
| Part number | NCEP0225G |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 382.47 KB |
| Description | N-Channel Super Trench Power MOSFET |
| Datasheet |
 NCEP0225G Datasheet
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General Description
The NCEP0225G uses Super Trench technology that is
General
Key Features
- uniquely optimized to provide the most efficient high.
- VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for.
- Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification.
- Very low on-resistance RDS(on).