• Part: NCEP0225G
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 382.47 KB
Download NCEP0225G Datasheet PDF
NCE Power Semiconductor
NCEP0225G
Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high - VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for - Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification. - Very low on-resistance RDS(on) Application - 150 °C operating temperature - DC/DC Converter - Ideal for high-frequency rectification switching and synchronous - Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package Reel Size Tape width g P0225G DFN5X6-8L - - n Absolute Maximum Ratings (TA=25℃unless otherwise noted) To Parameter Symbol Limit...