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CJP85N80 - N-Channel Power MOSFET

Description

provide excellent RDS(on) with low gate charge.

Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications.

1.

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Datasheet Details

Part number CJP85N80
Manufacturer JCET
File Size 825.95 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJP85N80 Datasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOSFET V(BR)DSS 85V RDS(on)MAX   8.5mΩ@10V ID 80A DESCRIPTION The CJP85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications. TO-220-3L-C 1. GATE 2.
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