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CJP80N03 - N-Channel Power MOSFET

Description

to provide excellent RDS(ON) with low gate charge.

wide variety of applications.

Features

  • 1. GATE 2. DRAIN 3. SOURCE 123 z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Excellent package for good heat dissipation z Special process technology for high ESD capability z Good stability and uniformity with high EAS.

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Datasheet preview – CJP80N03

Datasheet Details

Part number CJP80N03
Manufacturer JCET
File Size 700.84 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJP80N03 Datasheet
Additional preview pages of the CJP80N03 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N03 V(BR)DSS 30V N-Channel Power MOSFET RDS(on)MAX 6.5mΩ@10V 10mΩ@ 5V     ID 80A TO-220-3L-C DESCRIPTION The CJP80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES 1. GATE 2. DRAIN 3.
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