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CJP08N65 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

recovery time.

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Datasheet Details

Part number CJP08N65
Manufacturer JCET
File Size 1.09 MB
Description N-Channel MOSFET
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP08N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 1.4Ω@10V 8A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new recovery time. Desighed for high voltage, high speed switching high energy device also offers a drain-to-source diode fast applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE  High Current Rating  Lower RDS(on)  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified 1. GATE 2. DRAIN 3.
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