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IRG6B330UDPBF - PDP TRENCH IGBT

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP.

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Full PDF Text Transcription

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PD - 96304 IRG6B330UDPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters VCE min cVCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C TJ max 330 1.69 250 150 C V V A °C G E n-channel CE G TO-220AB GC E G ate C ollector Em itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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