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PDP TRENCH IGBT
PD - 97386
IRG6IC30UPbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency l High repetitive peak current capability l Lead Free package
Key Parameters
VCE min
cVCE(ON) typ. @ IC = 25A
IRP max @ TC= 25°C TJ max
600 1.50 250 150
C
V V A °C
G
CE G
E
n-channel
TO-220AB Full-Pak
G Gate
C Collector
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
IRG6IC30UPBF Datasheet
