Click to expand full text
PDP TRENCH IGBT
PD - 97351A
IRG6I320UPbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery
circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency l High repetitive peak current capability l Lead Free package
Key Parameters
VCE min
330
VCE(ON) typ. @ IC = 24A IRP max @ TC= 25°C TJ max
1.45 160 150
C
V V A °C
G
E
n-channel
G Gate
C Collector
CE G
TO-220AB Full-Pak
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
IRG6I320UPBF Datasheet
