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IRG6S330UPBF - PDP TRENCH IGBT

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG6S320UPBF PDP TRENCH IGBT
IRG6B330UDPBF PDP TRENCH IGBT
IRG6I320UPBF PDP TRENCH IGBT
IRG6I330UPBF PDP TRENCH IGBT
IRG6IC30UPBF PDP TRENCH IGBT

Full PDF Text Transcription

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PDP TRENCH IGBT PD - 96217A IRG6S330UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C TJ max 330 1.80 250 150 C V V A °C G E n-channel CE G D2Pak IRG6S330UPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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