IPB026N06N - Power-Transistor

Features

Optimized for synchronous rectification.
100% avalanche tested.
Superior thermal resistance.
N-channel, normal level.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IPB026N06N
Manufacturer	Infineon Technologies
File Size	541.19 KB
Description	Power-Transistor
Datasheet	IPB026N06N Datasheet
Additional preview pages of the IPB026N06N datasheet.

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Full PDF Text Transcription

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Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) IPB026N06N 60 V 2.

Published: Nov 12, 2015 |