IPB020N10N5 - N-Channel MOSFET

Features

With TO-263(D2PAK) packaging.
Ultra-fast body diode.
High speed switching.
Very low on-resistence.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

INCHANGE

Datasheet Details

Part number	IPB020N10N5
Manufacturer	INCHANGE
File Size	200.11 KB
Description	N-Channel MOSFET
Datasheet	IPB020N10N5 Datasheet
Additional preview pages of the IPB020N10N5 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPB020N10N5 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 176 135 704 PD Total Dissipation 375 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient t

Published: Sep 3, 2020 |