IPB021N10NM5LF2 - 100V Linear FET

Description

1 Maximum ratings 3 T

Features

Ideal for hot‑swap and e‑fuse.

Infineon

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Datasheet Details

Part number	IPB021N10NM5LF2
Manufacturer	Infineon
File Size	740.01 KB
Description	100V Linear FET
Datasheet	IPB021N10NM5LF2 Datasheet
Additional preview pages of the IPB021N10NM5LF2 datasheet.

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Full PDF Text Transcription

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Public IPB021N10NM5LF2 Final datasheet MOSFET OptiMOS™ 5 Linear FET 2, 100 V Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 100 V RDS(on),max 2.1 mΩ ID 176 A Ipulse (VDS=56 V, tp=10 ms) 10.7 A D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Part number IPB021N10NM5LF2 Package PG‑TO263‑3 Marking 21N10LF2 Related links ‑ Datasheet https://www.infineon.com 1 Revision 1.

Published: Apr 24, 2025 |