IPB020N10N5LF - N-Channel MOSFET

Features

With To-263(D2PAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPB020N10N5LF
Manufacturer	INCHANGE
File Size	253.86 KB
Description	N-Channel MOSFET
Datasheet	IPB020N10N5LF Datasheet
Additional preview pages of the IPB020N10N5LF datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor IPB020N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 120 480 PD Total Dissipation @TC=25℃ 313 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.

Published: Oct 5, 2020 |