IPB014N06N - Power Transistor

Features

Optimized for synchronous rectification.
100% avalanche tested.
Superior thermal resistance.
N-channel, normal level.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IPB014N06N
Manufacturer	Infineon Technologies
File Size	583.42 KB
Description	Power Transistor
Datasheet	IPB014N06N Datasheet
Additional preview pages of the IPB014N06N datasheet.

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Full PDF Text Transcription

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Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) IPB014N06N 60 V 1.

Published: Nov 14, 2015 |