IPB013N06NF2S
Features
- Optimized for wide range of applications
- N‑channel, normal level
- 100% avalanche tested
- Pb‑free lead plating; Ro HS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG(0V..10V)
Key Performance Parameters
Value
Unit
1.3 mΩ
200 n C
203 n C
D²PAK tab
2 1
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB013N06NF2S
Package PG‑TO263‑3
Marking 013N06NS
Related Links ‑
Datasheet https://.infineon.
Revision 2.1 2024‑10‑14
Public
Strong IRFET™2 Power‑Transistor, 60 V
Table of Contents
Description
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