IPB015N08N5 - MOSFET

Features

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

Datasheet Details

Part number	IPB015N08N5
Manufacturer	Infineon
File Size	1.19 MB
Description	MOSFET
Datasheet	IPB015N08N5 Datasheet
Additional preview pages of the IPB015N08N5 datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOS™5Power-Transistor,80V IPB015N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.5 mΩ ID 180 A Qoss 207 nC QG(0V..

Published: Feb 17, 2016 |