IPB011N04NF2S - MOSFET

Description

Features

Optimized for wide range of.

Infineon

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Datasheet Details

Part number	IPB011N04NF2S
Manufacturer	Infineon
File Size	1.02 MB
Description	MOSFET
Datasheet	IPB011N04NF2S Datasheet
Additional preview pages of the IPB011N04NF2S datasheet.

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IPB011N04NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.15 mΩ ID 201 A Qoss 233 nC QG(0V..10V) 210 nC D²PAK tab 2 1 3 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB011N04NF2S Package PG-TO263-3 Marking 011N04NS RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-10-12 StrongIRFETTM2Power-Transistor IPB011N04NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Published: Aug 10, 2023 |