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IPB009N03LG - MOSFET

Description

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Features

  • MOSFET for ORing and Uninterruptible Power Supply.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPB009N03LG
Manufacturer Infineon Technologies
File Size 1.01 MB
Description MOSFET
Datasheet download datasheet IPB009N03LG Datasheet
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IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.95 mΩ ID 180 A D²-PAK7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB009N03L G Package PG-TO263-7 Marking 009N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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