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IPB009N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
Features
•MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
0.95
mΩ
ID
180
A
D²-PAK7pin
tab 1
7
Drain Pin 4, tab
Gate Pin 1
Source Pin 2,3,5,6,7
Type/OrderingCode IPB009N03L G
Package PG-TO263-7
Marking 009N03L
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-04-21
OptiMOSª3Power-Transistor,30V
IPB009N03LG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .