IPB026N10NF2S - MOSFET

Description

Features

Optimized for a wide range of.

Infineon

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Datasheet Details

Part number	IPB026N10NF2S
Manufacturer	Infineon
File Size	1.11 MB
Description	MOSFET
Datasheet	IPB026N10NF2S Datasheet
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IPB026N10NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.65 mΩ ID 162 A Qoss 131 nC QG 103 nC D²PAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB026N10NF2S Package PG-TO263-3 Marking 026N10NS RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB026N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Published: May 12, 2025 |