IPA093N06N3 - Power Transistor

Datasheet Summary

Features

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters.
Excellent gate charge x R DS(on) product (FOM).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPA093N06N3
Manufacturer	Infineon Technologies
File Size	499.67 KB
Description	Power Transistor
Datasheet	IPA093N06N3 Datasheet
Additional preview pages of the IPA093N06N3 datasheet.

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Full PDF Text Transcription

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Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPA093N06N3 G IPA093N06N3 G Product Summary VDS RDS(on),max ID 60 V 9.

Published: Aug 1, 2011 |