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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPA029N06N
DataSheet
Rev.2.2 Final
PowerManagement&Multimarket
1Description
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
2.9
mΩ
ID 84 A
QOSS
65
nC
QG(0V..