IPA037N08N3 - Power-Transistor

This page provides the datasheet information for the IPA037N08N3, a member of the IPA037N08N3G Power-Transistor family.

Datasheet Summary

Features

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPA037N08N3
Manufacturer	Infineon
File Size	374.34 KB
Description	Power-Transistor
Datasheet	IPA037N08N3 Datasheet
Additional preview pages of the IPA037N08N3 datasheet.

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Full PDF Text Transcription

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPA037N08N3 G Product Summary VDS RDS(on),max ID IPA037N08N3 G 80 V 3.

Published: Oct 28, 2020 |