• Part: IPA028N08N3G
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 378.50 KB
Download IPA028N08N3G Datasheet PDF
Infineon
IPA028N08N3G
Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance RDS(on) - N-channel, normal level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G IPA028N08N3 G Product Summary VDS RDS(on),max ID 80 V 2.8 m W 89 A Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse4) E AS I D=89 A, R GS=25 W Gate source voltage V GS ±20 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T...