IPA045N10N3 - MOSFET

This page provides the datasheet information for the IPA045N10N3, a member of the IPA045N10N3G MOSFET family.

Datasheet Summary

Description

Features

N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPA045N10N3
Manufacturer	Infineon
File Size	1.48 MB
Description	MOSFET
Datasheet	IPA045N10N3 Datasheet
Additional preview pages of the IPA045N10N3 datasheet.

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Full PDF Text Transcription

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IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.5 mΩ ID 64 A TO-220-FP Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode IPA045N10N3 G Package PG-TO220-FP Marking 045N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Oct 28, 2020 |