IPA086N10N3G - MOSFET

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	IPA086N10N3G
Manufacturer	Infineon Technologies
File Size	523.96 KB
Description	MOSFET
Datasheet	IPA086N10N3G Datasheet
Additional preview pages of the IPA086N10N3G datasheet.

📁 Similar Datasheet

IPA086N10N3 - N-Channel MOSFET (INCHANGE)
IPA086N10N3 - MOSFET (Infineon)
IPA083N10N5 - MOSFET (Infineon)
IPA083N10N5 - N-Channel MOSFET (INCHANGE)
IPA029N06N - MOSFET (Infineon)
IPA029N06N - N-Channel MOSFET (INCHANGE)
IPA030N10N3 - N-Channel MOSFET (INCHANGE)
IPA030N10N3 - Power-Transistor (Infineon)
IPA030N10NF2S - MOSFET (Infineon)
IPA032N06N3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon Technologies

IPA028N08N3G - Power-Transistor
IPA030N10N3G - Power-Transistor
IPA037N08N3G - Power-Transistor
IPA045N10N3G - MOSFET
IPA057N08N3G - MOSFET
IPA075N15N3G - OptiMOS3 Power-Transistor
IPA093N06N3 - Power Transistor
IPA100N08N3G - Power-Transistor

Full PDF Text Transcription

Click to expand full text

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA086N10N3 G 100 V 8.

Published: Mar 27, 2011 |