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IPA086N10N3 - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max).
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPA086N10N3
Manufacturer INCHANGE
File Size 252.30 KB
Description N-Channel MOSFET
Datasheet download datasheet IPA086N10N3 Datasheet
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isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 256 PD Total Dissipation @TC=25℃ 39 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.8 UNIT ℃/W isc website：www.
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