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IPA100N08N3 G
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPA100N08N3 G
Product Summary V DS R DS(on),max ID 80 10 40 V mΩ A
Package Marking
PG-TO220-FP 100N08N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 www.DataSheet4U.
IPA100N08N3G Datasheet
