IPA180N10N3 - N-Channel MOSFET

Datasheet Summary

Features

Low drain-source on-resistance: RDS(on) ≤18mΩ (max).
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPA180N10N3
Manufacturer	INCHANGE
File Size	240.29 KB
Description	N-Channel MOSFET
Datasheet	IPA180N10N3 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 28 IDM Drain Current-Single Pulsed 112 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5.

Published: Oct 8, 2020 |