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IPA093N06N3 - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-220F package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Reduced switching and conduction losses.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPA093N06N3
Manufacturer INCHANGE
File Size 197.53 KB
Description N-Channel MOSFET
Datasheet download datasheet IPA093N06N3 Datasheet
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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA093N06N3 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 43 31 172 PD Total Dissipation @TC=25℃ 33 Tj Max.
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