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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA16N50P IXTP16N50P IXTQ16N50P
VDSS =
ID25 = ≤ RDS(on)
500V 16A 400mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P,TO-220) TO-263 TO-220 TO-3P
Maximum Ratings
500
V
500
V
±30
V
±40
V
16
A
35
A
16
A
750
mJ
10
V/ns
300
W
- 55 ... +150 150
- 55 ... +150
300 260
1.13/10
2.5 3.0 5.5
°C °C °C
°C °C
Nm/lb.in.
IXTQ16N50P Datasheet
