IXTQ160N10T - N-ChannelMOSFET

Datasheet Summary

Features

Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max).
Fast Switching.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTQ160N10T
Manufacturer	INCHANGE
File Size	252.45 KB
Description	N-ChannelMOSFET
Datasheet	IXTQ160N10T Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 160 A IDM Drain Current-Single Plused 430 A PD Total Dissipation @TC=25℃ 430 W Tj Max.

Published: Nov 21, 2020 |