IXTQ16N50P - N-Channel MOSFET

Datasheet Summary

Features

With TO-3P packaging.
High speed switching.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTQ16N50P
Manufacturer	INCHANGE
File Size	218.01 KB
Description	N-Channel MOSFET
Datasheet	IXTQ16N50P Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IXTQ16N50P ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 48 PD Total Dissipation 300 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.42 UNIT ℃/W isc website：www.iscsemi.

Published: Nov 20, 2020 |