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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C
IXFN 180N20
D
VDSS ID25
RDS(on) trr
= 200 V = 180 A = 10 mW < 250 ns
S
Maximum Ratings 200 200 ±20 ±30 180 100 720 36 64 4 5 700 -55 ... +150 150 -55 ...
IXFN180N20 Datasheet
