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Advanced Technical Information
HiPerFETTM Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
IXFN 100N25
VDSS ID25
RDS(on)
= 250 V = 100 A = 27 mW
trr £ 250 ns
Maximum Ratings 250 250 ±20 ±30 100 400 100 64 3 5 600 -55 ... +150 150 -55 ...
IXFN100N25 Datasheet
