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HiPerFETTM Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 120N20
VDSS =
ID25 = = RDS(on)
200 V
120 A 17 mΩ
trr ≤ 250 ns
Symbol
VDSS VDGR VGS VGSM ID25 IDM I
AR
EAR EAS dv/dt
PD TJ TJM Tstg T
L
VISOL
Md
Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque Terminal connection torque
Maximum Ratings
200
V
200
V
±20
V
±30
V
120
A
480
A
120
A
64
mJ
3
J
5 V/ns
600
W
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IXFN120N20 Datasheet
