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IXFN100N50Q3 - HiperFET Power MOSFET Q3-Class

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  • z z z S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V.

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Datasheet Details

Part number IXFN100N50Q3
Manufacturer IXYS Corporation
File Size 144.94 KB
Description HiperFET Power MOSFET Q3-Class
Datasheet download datasheet IXFN100N50Q3 Datasheet
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Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 82A 49mΩ 250ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 82 300 100 5 50 960 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
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