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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN140N30P
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous
Transient
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS IISOL ≤ 1mA
Mounting torque Terminal connection torque
t = 1min t = 1s
Maximum Ratings
300
V
300
V
±20
V
± 30
V
110
A
100
A
300
A
70
A
5
J
20
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5/13 1.3/11.5
Nm/lb.in. Nm/lb.in.
IXFN140N30P Datasheet
