Click to expand full text
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 100N50P
VDSS ID25
RDS(on) trr
= = ≤ ≤
500 V 90 A 49 mΩ 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C
Maximum Ratings 500 500 ±30 ±40 90 75 250 100 100 5 20 1040 -55 ... +150 150 -55 ...
IXFN100N50P Datasheet
