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HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
VDSS ID25
RDS(on)
= 100 V = 180 A = 8 mΩ
trr ≤ 250 ns
Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 100 100 ± 20 ± 30 180 100 720 180 60 3 5 600 -55 ... +150 150 -55 ...
IXFN180N10 Datasheet
