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IXFK48N50Q - Power MOSFET

Datasheet Summary

Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • International standard packages.
  • Low RDS (on).
  • Rated for unclamped Inductive load switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification.

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Datasheet preview – IXFK48N50Q

Datasheet Details

Part number IXFK48N50Q
Manufacturer ETC
File Size 48.21 KB
Description Power MOSFET
Datasheet download datasheet IXFK48N50Q Datasheet
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data VDSS ID25 RDS(on) IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW trr £ 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions 0.4/6 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 44N50 48N50 44N50 48N50 Maximum Ratings 500 500 ±20 ±30 44 48 176 192 48 60 2.5 5 500 -55 ... +150 150 -55 ...
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