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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V 900 V
ID25 10 A 12 A 13 A
RDS(on) 1.1 W 0.9 W 0.8 W
trr £ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90
Maximum Ratings 900 900 ±20 ±30 10 12 13 40 48 13 10 12 13 30 5 300 -55 ... +150 150 -55 ...
IXFM13N90 Datasheet
