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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90
V DSS
900 V 900 V 900 V
I
D25
10 A 12 A 13 A
trr £ 250 ns
R DS(on)
1.1 W 0.9 W 0.8 W
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
VDSS VDGR V
GS
VGSM ID25
IDM
IAR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C
TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
10N90 12N90 13N90 10N90 12N90 13N90 10N90 12N90 13N90
900 V 900 V
±20 V ±30 V
10 A 12 A 13 A 40 A 48 A 13 A 10 A 12 A 13 A
30 mJ
5 V/ns
300 W
-55 ... +150 150
-55 ...
IXFM10N90 Datasheet
