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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80
IXFH/IXFM 11 N80 IXFH/IXFM 13 N80
V DSS
800 V 800 V
I
D25
11 A 13 A
trr £ 250 ns
R DS(on)
0.95 W 0.80 W
Symbol VDSS VDGR VGS VGSM ID25
IDM
I
AR
EAR dv/dt
P D
TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.062 in.
IXFM11N80 Datasheet
