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HiPerFETTM Power MOSFETs
Single MOSFET Die Avalanche Rated
IXFK 48N55 IXFX 48N55
VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW
trr £ 250 ns
Preliminary data
Symbol
VDSS V
DGR
VGS V
GSM
I
D25
IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous Transient
T C
= 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
T C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247 TO-264
Maximum Ratings
550 V 550 V
±20 V ±30 V
48 A 192 A
44 A
60 mJ 3J
5 V/ns
560 W
-55 ... +150
150 -55 ... +150
°C
°C °C
300 °C
0.9/6 Nm/lb.in.
IXFK48N55 Datasheet
