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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V
ID25 200 A 180 A 200 A trr £ 250 ns
RDS(on) 6 mW 7 mW 6 mW
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C; Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C 200N06/200N07 180N07 N07 N06 N07 N06
Maximum Ratings 70 60 70 60 ±20 ±30 200 180 100 600 100 30 2 5 520 -55 ... +150 150 -55 ...
IXFN180N07 Datasheet
