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HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary Data
IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q
VDSS = 900 V
ID25
= 16 A
RDS(on) = 0.65 Ω
trr ≤ 250 ns
Symbol
VDSS VDGR VGS VGSM ID25 I
DM
IAR
E AR
EAS
dv/dt
PD T
J
TJM T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
T C
= 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V DD
≤
V, DSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
900
V
900
V
±20
V
±30
V
16
A
64
A
16
A
45
mJ
1.5
J
5
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ...
IXFH16N90Q Datasheet
