Click to expand full text
Preliminary Technical Information
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH160N15T2
VDSS =
ID25
=
≤ RDS(on)
trr
≤
150V 160A 9.0mΩ 160ns
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
160
A
440
A
80
A
1.5
J
15
V/ns
880
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
IXFH160N15T2 Datasheet
